Welcome to the GaNext project website, information regarding the project including work plan, consortium partners and the latest updates can be found here. Our webpage is aimed at spreading information to both the general public and to researches in related fields. We welcome any feedback and comments, simply write an e-mail to firstname.lastname@example.org
Gallium Nitride ”GaN” is a promising material to replace silicon in power electronics application in the 650V market sector. Power systems based on GaN are lighter, more compact, significantly more efficient and potentially cheaper than those based on Silicon. Within the GaNext project we aim to remove barriers for GaN adoption and demonstrate the higher efficiency and power density of GaN-based system in a range of applications. The heart of the project is the development of an intelligent GaN power module where the controller, drivers and protection circuits are co-packaged with the power devices.
Key Application Areas
GaNext “Next Generation GaN Power Module Project”
01 February 2020 to 31 December 2022
13 partners from 3 nations
Transport and Smart Mobility
ECS Process Technology, Equipment, Materials & Manufacturing