The first GaNext Intelligent Power Module (IPM) is assembled and ready for testing and encapsulation. A picture of the GaNext IPM before encapsulation is depicted below. This first series contains the half-bridge power stage with ICeGaN^TM 650V Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) from Cambridge GaN Devices (CGD). Individual heat spreaders are placed on top of the transistors to improve power dissipation. Infineon provided Silicon-On-Insulator (SOI) gate drivers to drive the power devices efficiently at high switching frequencies. The RISC-V controller of Fraunhofer with integrated analog front-end will be added in a later stage. Upcoming tests include double pulse measurements and characterization of the module’s thermal impedance. In the mean-time, the application partners started testing the IPM in their applications while Besi Netherlands is fine tuning the encapsulation process.